cystech electronics corp. spec. no. : c441 v8 issued date : 20 1 4. 0 5. 2 2 revised date : page no. : 1 / 9 mtb 4 d0n03atv8 cyste k product specification n - channel logic level enhancement mode power mosfet MTB4D0N03ATV8 features ? single drive requirement ? low on - resistance ? fast switching characteristic ? dynamic dv/dt rating ? repetitive avalanche rated ? pb - free lead plating and halogen - free package equivalent circuit outline ordering information device package shipping mtb 4 d0n03atv8 - 0 - t6 - g dfn3 3 ( pb - free lead plating and halogen - free package ) 3000 pcs / tape & reel dfn3 3 mtb 4 d0n03atv8 g gate d drain s source p in 1 bv dss 30v i d @ v gs =10v 15a r dson(typ) v gs =10v, i d =1 5 a 4. 7 m v gs =4.5v, i d = 12 a 6 .7m environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t 6 : 3000 pcs / tape & reel, 13 reel product rank, zero for no r ank products product name
cystech electronics corp. spec. no. : c441 v8 issued date : 20 1 4. 0 5. 2 2 revised date : page no. : 2 / 9 mtb 4 d0n03atv8 cyste k product specification absolute maximum ratings (ta=25 ? c , unless otherwise specified ) parameter symbol limits unit drain - sour c e voltage v ds 30 v gate - source voltage v gs 20 continuous drain current @ v gs =10v, t c =25 ? c i d 43 a continuous drain current @ v gs =10v, t c =100 ? c 2 7 continuous drain current @ v gs =10v, t a =25 ? c 1 5 continuous drain current @ v gs =10v, t a =70 ? c 1 2 pulsed drain current i dm 1 4 0 *1 avalanche energy @ l=0.1mh, i d = 43 a, r g =25 e as 92.5 mj repetitive avalanche energy @ l=0.05mh e ar 4.9 total power dissipation t c =25 p d 21 w t c =100 8.4 t a =25 p dsm 2.5 *2 t a =70 1.6 *2 operating junction and storage tempera ture range tj, tstg - 55~+1 50 ? c thermal data parameter symbol value unit thermal resistance, junction - to - case, max r th,j - c 6 ? c /w thermal resistance, junction - to - ambient, max r th,j - a 50 *2 ? c /w note : 1. pulse width limited by maximum ju nction temperature. 2. surface mounted on a 1 in 2 pad of 2oz copper. in practice r th,j - a will be determined by customer s pcb characteristics. 125 c/w when mounted on a minimum pad of 2 oz. copper. characteristics (t c =25 ? symbol min. typ. max. unit test conditions static bv dss 30 - - v v gs = 0v , i d = 250 a v gs(th) 1 1. 8 2. 0 v ds = v gs , i d = 250 a g fs *1 - 25 - s v ds = 5v , i d = 1 5 a i gss - - 100 n a v gs = 20v i dss - - 1 a v ds = 24v, v gs =0 - - 25 v ds = 24v, v gs =0, tj=125 ? c r ds ( on ) *1 - 4.7 7.0 m v gs = 10v , i d = 1 5 a - 6 .7 1 0 v gs = 4.5v , i d =12 a dynamic ciss - 15 11 - pf v ds =15v, v gs =0v, f=1mhz co ss - 299 - crss - 208 - qg *1, 2 - 30 - nc v ds =15v, v gs =10v, i d =1 5 a qgs *1, 2 - 4.6 - qgd *1, 2 - 9.3 - rg - 4.3 - v ds =0v, f=1mhz
cystech electronics corp. spec. no. : c441 v8 issued date : 20 1 4. 0 5. 2 2 revised date : page no. : 3 / 9 mtb 4 d0n03atv8 cyste k product specification characteristics (t c =25 ? symbol min. typ. max. unit test conditions t d(on) *1, 2 - 8 - ns v ds =15v, i d =1 5 a, v gs =10v, r gs = 3 tr *1, 2 - 11 - t d(o ff) *1, 2 - 28 - t f *1, 2 - 13 - source - drain diode i s *1 - - 4 a i sm *3 - - 16 v sd *1 - 0. 81 1.2 v i s = 15 a, v gs =0v trr - 14 - ns i f = 15 a, di f /dt=100a/ s qrr - 7 - nc note : * 1. pulse test : pulse width ? 3 0 0s, duty cycle ? 2% *2.independent of operating temperature *3.pulse width limited by maximum junction temperature. recommended soldering footprint unit : mm
cystech electronics corp. spec. no. : c441 v8 issued date : 20 1 4. 0 5. 2 2 revised date : page no. : 4 / 9 mtb 4 d0n03atv8 cyste k product specification typical characteristics typical output characteristics 0 20 40 60 80 100 120 140 0 1 2 3 4 5 vds, drain-source voltage(v) i d , drain current (a) 10v,9v,8v,7v,6v,5v v gs =3v v gs =3.5v v gs =4v brekdown voltage vs junction temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature( c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 1 10 100 1000 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =3v v gs =10v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 0 4 8 12 16 20 i dr , reverse drain current(a) v sd , source-drain voltage(v) tj=25 c tj=150 c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 40 80 120 160 200 0 2 4 6 8 10 v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =15a drain-source on-state resistance vs junction tempearture 0 0.4 0.8 1.2 1.6 2 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature( c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =15a r dson @ tj=25 c : 4.7 m typ
cystech electronics corp. spec. no. : c441 v8 issued date : 20 1 4. 0 5. 2 2 revised date : page no. : 5 / 9 mtb 4 d0n03atv8 cyste k product specification typical characteristic s(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature( c) v g s(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 i d , drain current(a) g fs , forward transfer admittance(s) ta=25 c pulsed v ds =5v gate charge characteristics 0 2 4 6 8 10 0 4 8 12 16 20 24 28 32 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =1 5 a v ds =15v v ds =10v v ds =5v maximum safe operating area 0.01 0.1 1 10 100 1000 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) t a =25 c, tj=150 c v gs =10v, r ja =50 c/w single pulse dc 100ms r dson limite 100 s 1ms 1s 10ms maximum drain current vs junction temperature 0 2 4 6 8 10 12 14 16 18 25 50 75 100 125 150 175 tj, junction temperature( c) i d , maximum drain current(a) t a =25 c, v gs =10v, r ja =50 c/w
cystech electronics corp. spec. no. : c441 v8 issued date : 20 1 4. 0 5. 2 2 revised date : page no. : 6 / 9 mtb 4 d0n03atv8 cyste k product specification typical characteristic s(cont.) typical transfer characteristics 0 20 40 60 80 100 120 140 0 1 2 3 4 5 v gs , gate-source voltage(v) i d , drain current(a) v ds =10v single pulse power rating, junction to ambient (note on page 2) 0 20 40 60 80 100 0.001 0.01 0.1 1 10 100 1000 pulse width(s) power (w) t j(max) =150c t a =25c ja =50c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =50c/w
cystech electronics corp. spec. no. : c441 v8 issued date : 20 1 4. 0 5. 2 2 revised date : page no. : 7 / 9 mtb 4 d0n03atv8 cyste k product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c441 v8 issued date : 20 1 4. 0 5. 2 2 revised date : page no. : 8 / 9 mtb 4 d0n03atv8 cyste k product specification reco mmended wave soldering condition product peak temperature soldering time pb - free devices 260 +0/ - 5 ? c 5 +1/ - 1 seconds recommended temperature profile for ir reflow profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (t smax to tp) 3 ? c /second max. 3 ? c /second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 ? c 150 ? c 60 - 120 seconds 150 ? c 200 ? c 60 - 180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 ? c 60 - 150 seco nds 217 ? c 60 - 150 seconds peak temperature(t p ) 240 +0/ - 5 ? c 260 +0/ - 5 ? c time within 5 ? c of actual peak temperature(tp) 10 - 30 seconds 20 - 40 seconds ramp down rate 6 ? c /second max. 6 ? c /second max. time 25 ? c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c441 v8 issued date : 20 1 4. 0 5. 2 2 revised date : page no. : 9 / 9 mtb 4 d0n03atv8 cyste k product specification dfn3 *: typical dim inches millimeters dim inches millimeters min. max. min. max. min. max. min. max. a 0. 0276 0. 0354 0.70 0.9 0 e 0.1181 0.1260 3.00 3.20 a1 0. 0000 0. 0197 0.00 0.50 e 1 0.0531 0.0610 1.35 1.55 b 0. 0094 0. 0138 0.24 0.35 e 0.0256 bsc 0.65 bsc c 0.0 039 0.0 079 0.10 0.20 h 0.1260 0.1339 3.20 3.40 d 0.1280 0.1339 3.25 3.40 l 0.0118 0.0197 0.30 0.50 d 1 0.1201 0.128 0 3.05 3.25 l 1 0.0039 0.0079 0.10 0.20 d2 0.0945 0.1024 2.40 2.60 l2 0.0445 ref 1.13 ref notes: 1. controlling dimension: millimeters. 2 . maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please contact your local cystek sales office. material: ? ? mold compound: epoxy resin family, flammability solid burning class: ul94v - 0 . importa nt notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cyste k . ? cyste k reserves the right to make changes to its products without notice. ? cyste k semiconductor products are not warrante d to be suitable for use in life - support applications, or systems. ? cyste k assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. marking: 8 - lead dfn3 3 plastic package cystek package code: v 8 date code s s s g d d d d b4d0n 03at
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